5SHY4045L0001 3BHB018162R0001

¥4,850.00

‌ Function and application ‌ :

It is a new type of power semiconductor device used in giant power electronic equipment.
Used in DCS system, robot system, large servo control system and other spare parts ‌

‌ Specifications and parameters ‌ :

‌ voltage ‌ : 24V‌.
‌ current ‌ : 100-400A‌2, with high current characteristics.
‌ Technical features ‌ : Based on the GTO structure, the integrated gate is used for hard drive, and the buffer layer and anode transparent emitter technology ‌.

Category:

Description

‌ Function and application ‌ :

It is a new type of power semiconductor device used in giant power electronic equipment.
Used in DCS system, robot system, large servo control system and other spare parts ‌

‌ Specifications and parameters ‌ :

‌ voltage ‌ : 24V‌.
‌ current ‌ : 100-400A‌2, with high current characteristics.
‌ Technical features ‌ : Based on the GTO structure, the integrated gate is used for hard drive, and the buffer layer and anode transparent emitter technology ‌.
‌ dynamic loss ‌ : The dynamic loss is reduced by about 50%‌ due to the buffering structure and shallow emitter technology.

‌ Weight and dimensions ‌ :

‌ weight ‌ : 2KG‌, also known as 1.25kg‌

‌ Other features ‌ :

Combines the transistor’s stable turn-off capability with the advantages of the thyristor’s low on-state loss ‌.
Progress has been made in power, reliability and switching speed ‌

Reviews

There are no reviews yet.

Be the first to review “5SHY4045L0001 3BHB018162R0001”

Your email address will not be published. Required fields are marked *

Post comment