3BHE039203R0101-3BHE036204P201-3BHE039204P106-GVC736CE101

¥2,652.00

‌ Product types and core components ‌

‌IGBT module ‌ : contains an insulated gate bipolar transistor (IGBT) and a continuous current diode chip (FWD).
‌ thyristor module ‌ : A semiconductor device used for power control.

‌ Main specifications and parameters ‌

‌IGBT module features ‌ :
Combining the advantages of MOSFET and GTR, the drive power is small and the saturation voltage is reduced.
Suitable for converter system with DC voltage 600V and above.
‌ thyristor module features ‌ :
High performance control, fast and accurate response.

Category:

Description

‌ Product types and core components ‌

‌IGBT module ‌ : contains an insulated gate bipolar transistor (IGBT) and a continuous current diode chip (FWD).
‌ thyristor module ‌ : A semiconductor device used for power control.

‌ Main specifications and parameters ‌

‌IGBT module features ‌ :
Combining the advantages of MOSFET and GTR, the drive power is small and the saturation voltage is reduced.
Suitable for converter system with DC voltage 600V and above.
‌ thyristor module features ‌ :
High performance control, fast and accurate response.
High reliability for harsh industrial environments.
Flexible configuration and programming for easy integration and maintenance.

‌ Functions and applications ‌

‌IGBT module ‌ : used for inverter, UPS uninterruptible power supply and other equipment, energy saving and easy installation and maintenance.
‌ thyristor module ‌ : used to adjust voltage, current and power factor, widely used in electric power, energy, transportation and other fields.

Reviews

There are no reviews yet.

Be the first to review “3BHE039203R0101-3BHE036204P201-3BHE039204P106-GVC736CE101”

Your email address will not be published. Required fields are marked *

Post comment