GVC704AE01 5SXE05-0152 3BHB003230R0101 3BHB003023P201

¥3,625.00

‌Parameters and Specifications‌:

The GVC736CE101 3BHE039203R0101 3BHE039204P201 module is an insulated gate bipolar transistor (IGBT) module, which combines the advantages of MOSFETs and bipolar junction transistors (BJTs).
It features high-quality components for high reliability and supports transmission speeds up to 10 Mbps.

‌Dimensions and Weight‌:

The dimensions of the module are 100 x 60 x 25 mm, and it weighs 200 grams.

‌Series‌:

The product series is 3BHE039203R0101.

Category:

Description

‌Parameters and Specifications‌:

The GVC736CE101 3BHE039203R0101 3BHE039204P201 module is an insulated gate bipolar transistor (IGBT) module, which combines the advantages of MOSFETs and bipolar junction transistors (BJTs).
It features high-quality components for high reliability and supports transmission speeds up to 10 Mbps.

‌Dimensions and Weight‌:

The dimensions of the module are 100 x 60 x 25 mm, and it weighs 200 grams.

‌Series‌:

The product series is 3BHE039203R0101.

‌Characteristics‌:

It offers high-performance control with advanced algorithms and circuit design for fast and accurate response.
It is highly reliable, having passed rigorous testing and validation for stable operation in harsh industrial environments.
It is easy to install and maintain due to its modular design.
It supports multiple communication protocols and provides diagnostic functions.

‌Functions‌:

The module is used for precise control of voltage, current, and power factor in power control systems.
It is widely applied in industries such as power, energy, transportation, and construction due to its excellent control performance and stability.
It serves as a key component in power control, enabling efficient energy conversion and transmission.